, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 uhf linear push-pull power transistor BLV859 features ? double internal input and output matching for an optimum wideband capability and high gain ? polysilicon emitter ballasting resistors for an optimum temperature profile ? gold metallization ensures excellent reliability. application ? common emitter class-a operation in linear transposers/transmitters (television) in the 470 to 860 mhz frequency band. description npn silicon planar transistor with two sections in push-pull configuration. the device is encapsulated in a sot262b 4-lead rectangular flange package, with two ceramic caps. it delivers a p0 sync = 20 w in class-a operation at 860 mhz and a supply voltage of 25 v. pinning sot262b pin 1 2 3 4 5 symbol c1 c2 b1 b2 e description collector 1 collector 2 base 1 base 2 emitter fig.1 simplified outline and symbol. quick reference data rf performance at tt, = 25 c in a common emitter push-pull test circuit. mode of operation cw class-a f (mhz) 860 vce (v) 25 'cq (a) 2 x 2.25 po sync (w) >20<1> gp (db) >100) note 1. three-tone test signal (-8, -16 and -10 db); dim = -54 db. n.i .semi-coiiduetors reserves the right to change test conditions, parameter limits and package dimensions without notice information furnished by nj scmi-t on juctom ii believed to he holh uccurale ami reliable ill the lime of going to press. however \ semi ?(.'?iijuthirs .bsiuins nu responsibility for ;my errors nr omissions discovered in its use nj semi-t.iiitdijt.il >rs on . n-.t< huts to vcrifv ih.n dntashcets nre current before placinis .irden
uhf linear push-pull power transistor BLV859 limiting values in accordance with the absolute maximum rating system (iec 134). symbol vcbo vceo vebo ic lc(av) plot tstg tj parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (dc) average collector current total power dissipation storage temperature operating junction temperature conditions open emitter open base open collector tmb = 70 c; note 1 min. - - - - - - -65 - max. 60 28 2.5 15 15 145 +150 200 unit v v v a a w c c thermal characteristics symbol r(h j-mb rfh mb-h parameter thermal resistance from junction to mounting-base thermal resistance from mounting-base to heatsink conditions p,ot = 145 w; tmb = 70 c note 1 note 1 value 0.9 0.15 unit k/w k/w uhf linear push-pull power transistor BLV859 characteristics values apply to either transistor section; j = 25 c unless otherwise specified. symbol v(br)cbo v(br)ceo v(br)ebo icbo iceo hr-e co cre parameter collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current collector-emitter leakage current dc current gain collector capacitance feedback capacitance conditions lc = 30 ma; ie = 0 lc = 60 ma; ib = 0 ie = 1 .2 ma; lc = 0 vcb = 27 v; vbe = 0 vce = 20 v vce = 25 v; lc = 2.25 a vcb = 25 v; ie = ie = 0; f=1 mhz vce = 25v; lb = 0;f=1 mhz min. 60 28 2.5 - - 30 ? - typ. - - - - - _ 36<1> 22 max. - - - 3 6 140 ? - unit v v v ma ma pf pf
* + '?>*?' i ?2n t 1 1 t 5.4 t may ! 1 1.65 ^ ? seatina diane 34.3 max dimensions in mm. torque on screw: min. 0.6 nm; max. 0.75 nm. recommended screw: cheese-head 4-40 unc/2a. heatsink compound must be applied sparingly and evenly distributed.
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